Module: Solid-State Electronics & Semiconductor Devices

Module Specifications.

Current Academic Year 2024 - 2025

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Date posted: September 2024

Module Title	Solid-State Electronics & Semiconductor Devices
Module Code	EE463 (ITS) / EEN1049 (Banner)
Faculty	Engineering & Computing	School	Electronic Engineering
Module Co-ordinator	Rajani K. Vijayaraghavan
Module Teachers	Patrick McNally
NFQ level	8	Credit Rating	7.5
Pre-requisite	Not Available
Co-requisite	Not Available
Compatibles	Not Available
Incompatibles	Not Available

None

Description

The operation of modern semiconductor devices is underpinned by a good knowledge of the physics of solid-state materials and electronics. This module is motivated by the need to link physical models with modern device operation. The module uses basic quantum mechanical physical principles to explain the properties of materials of interest in electronic engineering practice. A knowledge of the bonding between atoms is essential to understand the behaviour of solids and their electronic properties, which distinguish conductors from semiconductors and insulators. These impact on the electronic properties of materials, which in turn control the operation of electronic devices currently used and under development. Building on this foundation of solid-state physics the module introduces the student to the basic parameters which control the behaviour of electronic devices, such as diodes, bipolar transistors, MOSFETs and lasers. The phenomena which occur in non-idealized devices are studied and the behaviour of real devices is examined in the light of these phenomena.

Learning Outcomes

1. Differentiate between simple cubic, face centred cubic and body centred cubic crystaline structures.
2. Describe electrical conduction in metals using the Drude model.
3. Apply the Schrodinger wave equation (SWE) to explain quantum mechanical phenomena such as tunnelling.
4. Describe the behaviour of electrons in a potential well and extend this knowledge to the motion of electrons in a periodic structure.
5. Differentiate between insulators, semiconductors and metals utilising concepts such as bandstructure, Fermi-Dirac statistics, effective mass etc.
6. Calculate the position of the extrinsic Fermi Level in doped semiconductors.
7. Explain Schottky, Ohmic and Neutral contacts; design such junctions and calculate the depletion region widths.
8. Explain and calculate the I-V characteristics of pn junctions, including the calculation of diffusion and drift contributions to currents, and transient charge storage phenomena.
9. Explain the operation of bipolar junction transistors (BJT) using the Ebers-Moll model.
10. Describe MOSFET I-V and switching characteristics.
11. Explain the basic operation of a solar cell device.
12. Explain the basic operation of the laser.
13. Explain how real devices are fabricated, including critical semiconductor wafer processing steps.

*Type*	*Hours*	*Description*
Workload	Full-time hours per semester
Lecture	36	Formal lectures
Fieldwork	32	Laboratory analysis in support of class lectures.
Independent Study	120	Independent study and learning
Total Workload: 188

All module information is indicative and subject to change. For further information,students are advised to refer to the University's Marks and Standards and Programme Specific Regulations at: http://www.dcu.ie/registry/examinations/index.shtml

Indicative Content and Learning Activities

Indicative Syllabus
Crystal Structure. Atoms, lattices, symmetries, crystals. Common systems: simple cubic, face centred cubic and body centred cubic crystaline structures. The Drude model of electronic conduction. Breakdown of the Drude model and the need for quantum mechanics. The Schroedinger Wave Equation: Particle in a box. Tunnelling. Electron Waves and the periodic lattice potential. Band structure, Fermi-Dirac statistics, effective mass. Intrinsic and extrinsic semiconductors. Impact of doping. Metal-Semiconductor Contacts. Depletion region widths. PN Junctions. I-V characteristics. Calculation of diffusion and drift contributions to currents, and transient charge storage. Bipolar Junction Transistors (BJTs). The Ebers-Moll model. Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). I-V and switching characteristics. Advanced device concepts: Solar cell and lasers. Semiconductor device fabrication. Oxides, metals, doping, etch and deposition techniques, interconnect, packaging.

Assessment Breakdown
Continuous Assessment	20%	Examination Weight	80%

Type	Description	% of total	Assessment Date
Course Work Breakdown
Laboratory Portfolio	A series of two laboratory-based exercises with a particular focus on the fundamentals of Quantum Mechanics (Lab #1: the measurement of the Photoelectric Effect) and the operation of metal-semiconductor junctions (Lab #2: characterisation and analysis of Schottky diodes and the implications of the ideality factor).	20%	n/a

Reassessment Requirement Type
Resit arrangements are explained by the following categories: Resit category 1: A resit is available for both* components of the module. Resit category 2: No resit is available for a 100% continuous assessment module. Resit category 3: No resit is available for the continuous assessment component where there is a continuous assessment and examination element.
* ‘Both’ is used in the context of the module having a Continuous Assessment/Examination split; where the module is 100% continuous assessment, there will also be a resit of the assessment
This module is category 1

Indicative Reading List

S. O. Kasap: 2006, Principles of Electronic Materials and Devices, 3rd, McGraw-Hill, Boston, USA, 978-0073104645
Simon M. Sze & Ming-Kwei Lee: 2012, Semiconductor Devices: Physics and Technology, 3rd International Student Version, John Wiley & Sons, USA, 978-0470873670
Kevin F. Brennan: 2010, Introduction to Semiconductor Devices: For Computing and Telecommunications Applications, 1st, Cambridge University Press, UK, 978-0-521-15361-4

Other Resources

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