Module: Solid-State Electronics & Semiconductor Devices

Module Specifications

Academic Year 2025 - 2026

Module Title	Solid-State Electronics & Semiconductor Devices
Module Code	EEN1049 (ITS: EE463)
Faculty	Engineering & Computing	School	Electronic Engineering
NFQ level	8	Credit Rating	7.5

Description

The operation of modern semiconductor devices is underpinned by a good knowledge of the physics of solid-state materials and electronics. This module is motivated by the need to link physical models with modern device operation. It uses basic quantum mechanical principles to explain the properties of materials of interest in electronic engineering practice. Knowledge of atomic bonding is essential for understanding how solids behave and why their electronic properties differ, distinguishing conductors, semiconductors and insulators. These material properties directly influence the performance of electronic components, shaping the operation of current and emerging technologies. Building on this foundation of solid-state physics the module introduces the student to the basic parameters which control the behaviour of electronic devices, such as diodes, transistors, MOSFETs, and solar cells.

Learning Outcomes

1. Demonstrate a comprehensive understanding of the principles of solid-state physics including crystal structures, electronic band theory, and charge carrier dynamics in semiconductors
2. Understand and differentiate between insulators, semiconductors, and metals utilizing the concepts such as band structure, Fermi-Dirac statistics, effective mass, etc., and their applications to concepts such as Ohmic/Schottky contacts, MOS structures etc.
3. Demonstrate an understanding of the key concepts involved in semiconductor device operation and their characteristics
4. Apply appropriate laboratory techniques to understand the fundamentals of quantum mechanics and to measure semiconductor device characteristics

*Type*	*Hours*	*Description*
Workload	Full time hours per semester
Lecture	36	Formal lectures
Laboratory	32	Laboratory analysis in support of class lectures.
Independent Study	120	Independent study and learning
Total Workload: 188

Section Breakdown
CRN	11033	Part of Term	Semester 1
Coursework	20%	Examination Weight	80%
Grade Scale	40PASS	Pass Both Elements	N
Resit Category	RC1	Best Mark	N
Module Co-ordinator	Rajani K. Vijayaraghavan	Module Teacher	Patrick McNally

Section Breakdown
CRN	11824	Part of Term	Semester 1
Coursework	20%	Examination Weight	80%
Grade Scale	40PASS	Pass Both Elements	N
Resit Category	RC1	Best Mark	N
Module Co-ordinator	Rajani K. Vijayaraghavan	Module Teacher

Type	Description	% of total	Assessment Date
Assessment Breakdown
Laboratory Portfolio	A series of two laboratory-based exercises with a particular focus on the fundamentals of Quantum Mechanics (Lab #1: the measurement of the Photoelectric Effect) and the operation of metal-semiconductor junctions (Lab #2: characterisation and analysis of Schottky diodes and the implications of the ideality factor).	20%	n/a
Formal Examination	n/a	80%	End-of-Semester

Reassessment Requirement Type
Resit arrangements are explained by the following categories; RC1: A resit is available for both^* components of the module. RC2: No resit is available for a 100% coursework module. RC3: No resit is available for the coursework component where there is a coursework and summative examination element. ^* ‘Both’ is used in the context of the module having a coursework/summative examination split; where the module is 100% coursework, there will also be a resit of the assessment

Pre-requisite	None
Co-requisite	None
Compatibles	None
Incompatibles	None

All module information is indicative and subject to change. For further information,students are advised to refer to the University's Marks and Standards and Programme Specific Regulations at: http://www.dcu.ie/registry/examinations/index.shtml

Indicative Content and Learning Activities

Indicative Syllabus
• Crystal Structure, Atoms, lattices, symmetries, crystals. Common systems: simple cubic, face centred cubic and body centred cubic crystaline structures. • The Drude model of electronic conduction. Breakdown of the Drude model and the need for quantum mechanics. • The Schroedinger Wave Equation: Particle in a box. Tunnelling. Electron Waves and the periodic lattice potential. • Band structure, Fermi-Dirac statistics, effective mass. Intrinsic and extrinsic semiconductors. Impact of doping. Metal-Semiconductor Contacts. Depletion region widths. • PN Junctions. I-V characteristics. Calculation of diffusion and drift contributions to currents, and transient charge storage. • Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). I-V and switching characteristics. • Advanced device concepts: Solar cells, lasers etc. • Semiconductor device fabrication. Oxides, metals, doping, etch, patterning and deposition techniques, interconnect, packaging.

Indicative Reading List

Books:

S. M. Sze: 2012, Semiconductor Devices, John Wiley & Sons, 582, 978-0470873670
Ben Streetman,Sanjay Banerjee: 0, Solid State Electronic Devices, 9781292060552
Marius Grundmann: 2021, The Physics of Semiconductors, Springer Nature, 905, 978-3-030-51569-0
Safa O. Kasap, Prof.: 2005, Principles of Electronic Materials and Devices, McGraw-Hill Education, 768, 978-0073104645

Articles:
None

Other Resources

None